Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure

被引：123

作者：

Syu, Yong-En ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Tsai, Tsung-Ming ^{[3
]}

Hung, Ya-Chi ^{[3
]}

Chang, Kuan-Chang ^{[3
]}

Tsai, Ming-Jinn ^{[4
]}

Kao, Ming-Jer ^{[4
]}

Sze, Simon M. ^{[5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan

[4] ITRI, Nanoelect Technol Div, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan

[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 04期

关键词：

Cobalt silicon oxide (CoSiOX); nonvolatile memory (NVM); redox reaction; resistance switching; NONVOLATILE MEMORY;

D O I：

10.1109/LED.2011.2104936

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiOX/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction.

引用

页码：545 / 547

页数：3

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