Direct observation of oxygen movement during resistance switching in NiO/Pt film

被引：156

作者：

Yoshida, Chikako ^{[1
]}

Kinoshita, Kentaro ^{[1
]}

Yamasaki, Takahiro ^{[1
]}

Sugiyama, Yoshihiro ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

关键词：

Secondary ion mass spectrometry - Oxygen - Conductive films - Atomic force microscopy;

D O I：

10.1063/1.2966141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that both a low resistance state and a high resistance state can be written by bipolar voltage application in a local region of NiO/Pt films by using conducting atomic force microscopy. To investigate how oxygen played a role in the resistance switching phenomenon, a local writing process in O-18 tracer gas atmosphere was carried out and the composition change was examined by time-of-flight secondary ion mass spectroscopy. As a result, it was revealed that oxygen moves to the anode side, and the composition of the NiO surface might change thereby causing the change in resistance. (C) 2008 American Institute of Physics.

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页数：3

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