Room temperature dc and ac electrical behaviour of undoped ZnO films under UV light

被引:16
作者
Martins, R
Igreja, R
Ferreira, I
Marques, A
Pimentel, A
Gonçalves, A
Fortunato, E [1 ]
机构
[1] Univ Nova Lisboa, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal
[2] Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Portugal
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 118卷 / 1-3期
关键词
oxide semiconductors; ZnO thin films; nanostructured oxides; UV sensors;
D O I
10.1016/j.mseb.2004.12.089
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper studies the dc and ac impedance behaviour of undoped ZnO thin films produced by spray pyrolysis and rf magnetron sputtering under UV light illumination, at room temperature, emphasising the role that the crystallite size, structure, surface morphology and the state of surface have on the electrical responsivities obtained. The results achieved show that the sputtered films with crystal sizes of about 4 nm exhibit dc electrical UV responsivities of 10(8). On the other hand, the spray pyrolysis films exhibit the lowest dc responsivities, due the high crystal sizes and state of surface contamination, to which very good capacitance responses were obtained, mainly due to the degree of porosity exhibit by these films when produced at low temperatures. Based on that, a two-phase electrical model is proposed to explain the set of behaviours observed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:135 / 140
页数:6
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