共 11 条
12-GHz Thin-Film Transistors on Transferrable Silicon Nanomembranes for High-Performance Flexible Electronics
被引:143
作者:

Sun, Lei
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机构:
Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

Qin, Guoxuan
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h-index: 0
机构:
Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

Seo, Jung-Hun
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h-index: 0
机构:
Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

Celler, George K.
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机构:
Soitec USA, Peabody, MA 01960 USA Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

Zhou, Weidong
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机构:
Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

Ma, Zhenqiang
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h-index: 0
机构:
Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
机构:
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[2] Soitec USA, Peabody, MA 01960 USA
[3] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA
来源:
关键词:
Alignment;
flexible electronics;
nanomembrane;
radio frequency (RF);
thin-film transistors (TFT);
D O I:
10.1002/smll.201000522
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 mu m channel alignment for the SiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high-performance flexible electronics.
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页码:2553 / 2557
页数:5
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