12-GHz Thin-Film Transistors on Transferrable Silicon Nanomembranes for High-Performance Flexible Electronics

被引:143
作者
Sun, Lei [1 ]
Qin, Guoxuan [1 ]
Seo, Jung-Hun [1 ]
Celler, George K. [2 ]
Zhou, Weidong [3 ]
Ma, Zhenqiang [1 ]
机构
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[2] Soitec USA, Peabody, MA 01960 USA
[3] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA
关键词
Alignment; flexible electronics; nanomembrane; radio frequency (RF); thin-film transistors (TFT);
D O I
10.1002/smll.201000522
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 mu m channel alignment for the SiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high-performance flexible electronics.
引用
收藏
页码:2553 / 2557
页数:5
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