Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector

被引：30

作者：

Tian, Y ^{[1
]}

Zhou, TM ^{[1
]}

Zhang, BL ^{[1
]}

Jin, YX ^{[1
]}

Ning, YQ ^{[1
]}

Jiang, H ^{[1
]}

Yuan, G ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Phys, Changchun 130021, Peoples R China

来源：

OPTICAL ENGINEERING | 1998年 / 37卷 / 06期

关键词：

Auger mechanism; GaInAsSb infrared photovoltaic detector; R(0)A product; detectivity;

D O I：

10.1117/1.601795

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A theoretical analysis of the Auger mechanism in a GalnAsSb infrared photovoltaic detector is reported. The considerations are carried out for near-room temperature and 2.5-mu m wavelength. The results show that the Auger mechanism can be suppressed by optimizing the material parameters. Thus, the performance of such detectors can be improved. (C) 1998 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(98)02206-5].

引用

页码：1754 / 1762

页数：9

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