Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections

被引:87
作者
Hu, CK [1 ]
Gignac, L
Malhotra, SG
Rosenberg, R
Boettcher, S
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Corp, Microelect Div, Hopewell Jct, NY 12533 USA
关键词
D O I
10.1063/1.1347400
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electromigration in 0.27 mum wide Cu damascene interconnections has been investigated. The results show that the electromigration time to failure of Cu interconnections is greatly influenced by the thickness of the metal liner at the contact between the via and underlying line. A remarkably long lifetime was achieved when a 3 nm thick liner (at the via/metal line interface) was used, since the abrupt mass flux divergence at this interface normally seen is greatly diminished. Voids were found in the regions where there was no electric field and on the bamboo Cu grain structure. Void formation is explained by the effect of a vacancy wind. (C) 2001 American Institute of Physics.
引用
收藏
页码:904 / 906
页数:3
相关论文
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