METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF COPPER USING HYDRATED COPPER FORMATE AS A NEW PRECURSOR

被引：25

作者：

MOUCHE, MJ ^{[1
]}

MERMET, JL ^{[1
]}

ROMAND, M ^{[1
]}

CHARBONNIER, M ^{[1
]}

机构：

[1] UNIV LYON 1,CHIM APPL LAB,CNRS,ERS 069,F-69222 VILLEURBANNE,FRANCE

来源：

THIN SOLID FILMS | 1995年 / 262卷 / 1-2期

关键词：

CHEMICAL VAPOR DEPOSITION; COPPER; MASS SPECTROSCOPY; WHISKERS;

D O I：

10.1016/0040-6090(95)05813-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper films were obtained by metal-organic chemical vapour deposition using hydrated copper formate. The films were deposited on Si(100) and sputtered TiN/Si(100) 4-in wafers, at substrate temperatures of about 300 degrees C, with a reducing or inert carrier gas. Results from X-ray diffraction and X-ray photoelectron spectroscopy indicated a pure, crystalline and oxygen-free copper. Different film morphologies were observed by scanning electron microscopy: both continuous films and inhomogeneous films with copper crystallites monodirectionally oriented were observed. In situ mass-spectroscopy analysis allows the proposal of some reaction mechanisms and highlights the importance of the initial hydration level of the precursor on the nucleation rate.

引用

页码：1 / 6

页数：6

共 30 条

[1] Awaya N., 1992, Advanced Metallization for ULSI Applications (Formerly Workshop on Tungsten and Other Advanced Metals for ULSI Applications) Proceedings of the Conference, P345
[2] CHEMICAL VAPOR-DEPOSITED COPPER FROM ALKYNE STABILIZED COPPER(I) HEXAFLUOROACETYLACETONATE COMPLEXES
BAUM, TH
LARSON, CE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (01) : 154 - 159
[3] Chang Y., 1993, Advanced Metallization for ULSI Applications 1992. Proceedings of the Conference, P141
[4] SELECTIVITY IN COPPER CHEMICAL VAPOR-DEPOSITION
COHEN, SL
LIEHR, M
KASI, S
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (13) : 1585 - 1587
[5] MECHANISMS OF COPPER CHEMICAL VAPOR-DEPOSITION
COHEN, SL
LIEHR, M
KASI, S
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (01) : 50 - 52
[6] GALWEY AK, 1974, J PHYS CHEM-US, V8, P2664
[7] CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM CU+1 PRECURSORS IN THE PRESENCE OF WATER-VAPOR
GELATOS, AV
MARSH, R
KOTTKE, M
MOGAB, CJ
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (20) : 2842 - 2844
[8] GROWTH-KINETICS OF COPPER THIN-FILMS IN DIFFERENT MOCVD SYSTEMS
GERFIN, T
BECHT, M
DAHMEN, KH
[J]. JOURNAL DE PHYSIQUE IV, 1993, 3 (C3): : 345 - 352
[9] DECOMPOSITION OF HEXAFLUOROACETYLACETONATE CU(I) VINYLTRIMETHYLSILANE ON, AND DIFFUSION OF CU INTO SINGLE-CRYSTAL AND POLYCRYSTALLINE TITANIUM NITRIDE
GUINN, KV
DONNELLY, VM
GROSS, ME
BAIOCCHI, FA
PETROV, I
GREENE, JE
[J]. SURFACE SCIENCE, 1993, 295 (1-2) : 219 - 229
[10] LASER WRITING OF COPPER LINES FROM METALORGANIC FILMS
GUPTA, A
JAGANNATHAN, R
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2254 - 2256

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