Kink-induced buckled dimers on Si(001) and Ge(001) at room temperature studied by scanning tunneling microscopy

被引：30

作者：

Tochihara, H ^{[1
]}

Sato, T ^{[1
]}

Sueyoshi, T ^{[1
]}

Amakusa, T ^{[1
]}

Iwatsuki, M ^{[1
]}

机构：

[1] JEOL LTD,AKISHIMA,TOKYO 196,JAPAN

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.53.7863

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of kinks at monatomic steps on Si(001) and Ge(001) is investigated by high-resolution scanning tunneling microscopy at room temperature. In addition to previously known asymmetric-dimers at edges of the S-A and S-B steps running parallel and perpendicular to dimer rows in the upper terrace, respectively, we have found that kinks at both S-A and S-B steps induce buckled (asymmetric-appearing) dimers locally in the connecting dimer rows in the lower terrace. Influence of the kinks on the formation of a c(4 x 2) phase of asymmetric dimers at low temperatures is discussed.

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收藏

页码：7863 / 7867

页数：5

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