Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

被引：32

作者：

Ong, H. G. ^{[1
]}

Cheah, J. W. ^{[1
]}

Zou, X. ^{[1
]}

Li, B. ^{[2
]}

Cao, X. H. ^{[1
]}

Tantang, H. ^{[1
]}

Li, L-J ^{[3
]}

Zhang, H. ^{[1
]}

Han, G. C. ^{[4
]}

Wang, J. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Katholieke Univ Leuven, Div Mol & Nano Mat, Dept Chem, B-3001 Heverlee, Belgium

[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[4] Data Storage Inst, Singapore 117608, Singapore

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 28期

关键词：

DEVICES;

D O I：

10.1088/0022-3727/44/28/285301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.

引用

页数：5

共 30 条

[1] Logic circuits with carbon nanotube transistors [J].

Bachtold, A ;

Hadley, P ;

Nakanishi, T ;

Dekker, C .

SCIENCE, 2001, 294 (5545) :1317-1320

[2]

Chazalviel J.-N., 1999, Coulomb Screening by Mobile Charges: Applications to Materials Science, Chemistry, and Biology

[3] Carbon nanotube memory devices of high charge storage stability [J].

Cui, JB ;

Sordan, R ;

Burghard, M ;

Kern, K .

APPLIED PHYSICS LETTERS, 2002, 81 (17) :3260-3262

[4] Carbon nanotube inter- and intramolecular logic gates [J].

Derycke, V ;

Martel, R ;

Appenzeller, J ;

Avouris, P .

NANO LETTERS, 2001, 1 (09) :453-456

[5] Unusual properties and structure of carbonnanotubes [J].

Dresselhaus, MS ;

Dresselhaus, G ;

Jorio, A .

ANNUAL REVIEW OF MATERIALS RESEARCH, 2004, 34 :247-278

[6] Bending and buckling of carbon nanotubes under large strain [J].

Falvo, MR ;

Clary, GJ ;

Taylor, RM ;

Chi, V ;

Brooks, FP ;

Washburn, S ;

Superfine, R .

NATURE, 1997, 389 (6651) :582-584

[7] High-mobility nanotube transistor memory [J].

Fuhrer, MS ;

Kim, BM ;

Durkop, T ;

Brintlinger, T .

NANO LETTERS, 2002, 2 (07) :755-759

[8] Study of Charge Diffusion at the Carbon Nanotube-SiO2 Interface by Electrostatic Force Microscopy [J].

He, Yingran ;

Ong, Hock Guan ;

Zhao, Yang ;

He, Sailing ;

Li, Lain-Jong ;

Wang, Junling .

JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (35) :15476-15479

[9] Ballistic carbon nanotube field-effect transistors [J].

Javey, A ;

Guo, J ;

Wang, Q ;

Lundstrom, M ;

Dai, HJ .

NATURE, 2003, 424 (6949) :654-657

[10] Quantitative analysis of hysteresis in carbon nanotube field-effect devices [J].

Kar, Swastik ;

Vijayaraghavan, Aravind ;

Soldano, Caterina ;

Talapatra, Saikat ;

Vajtai, Robert ;

Nalamasu, Omkaram ;

Ajayan, Pulickel M. .

APPLIED PHYSICS LETTERS, 2006, 89 (13)

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