Low-temperature growth and interface characterization of BiFeO3 thin films with reduced leakage current -: art. no. 172901

被引:143
作者
Lee, YH [1 ]
Wu, JM [1 ]
Chueh, YL [1 ]
Chou, LJ [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
D O I
10.1063/1.2112181
中图分类号
O59 [应用物理学];
学科分类号
摘要
BiFeO3 (BFO) thin films of pure perovskite phase were deposited on LaNiO3-buffered Pt/TiOx/SiO2/Si (LNO) and Pt/TiOx/SiO2/Si (Pt) substrates by RF magnetron sputtering. Highly (100)-oriented BFO film was coherently grown on LNO at a temperature as low as 300 degrees C. The crystal structure and the film/electrode interface of BFO films were characterized using x-ray diffraction and scanning transmission electron microscope high-angle annular dark-field imaging. The conventional problem of the leakage current was greatly reduced with remarkable improvement in the film/electrode interface, chemical homogeneity, crystallinity, and surface roughness of the BFO film. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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