Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films

被引：40

作者：

Bae, Jieun ^{[1
]}

Hwang, Inrok ^{[1
]}

Jeong, Yuhyun ^{[2
]}

Kang, Sung-Oong ^{[3
]}

Hong, Sahwan ^{[1
]}

Son, Jongwan ^{[1
]}

Choi, Jinsik ^{[1
]}

Kim, Jinsoo ^{[1
]}

Park, June ^{[2
]}

Seong, Maeng-Je ^{[2
]}

Jia, Quanxi ^{[1
,4
]}

Park, Bae Ho ^{[1
]}

机构：

[1] Konkuk Univ, Div Quantum Phases & Devices, Dept Phys, Seoul 143701, South Korea

[2] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea

[3] Gwangju Inst Sci & Technol, Res Inst Solar & Sustainble Energies, Kwangju 500712, South Korea

[4] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

niobium compounds; Raman spectra; self-assembly; thin films; transmission electron microscopy; NONVOLATILE MEMORY; HIGH-DENSITY; OXIDES;

D O I：

10.1063/1.3685485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both bi-stable memory and mono-stable threshold switching are observed in amorphous NbOx films. In addition, the transition between memory and threshold switching can be induced by changing external electrical stress. Raman spectroscopy and transmission electron microscope data show that the NbOx film is self-assembled into a layered structure consisting of a top metal-rich region and a bottom oxygen-rich region. The volume ratio of the two regions depends on the film thickness. Our experimental results suggest that different characteristics of conducting filaments in the two regions result in thickness dependence of switching types and the transition between memory and threshold switching. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3685485]

引用

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