Time-dependent electroforming in NiO resistive switching devices

被引:36
作者
Buh, Gyoung-Ho [1 ]
Hwang, Inrok [2 ]
Park, Bae Ho [2 ]
机构
[1] Korea Res Inst Chem Technol, Taejon 305600, South Korea
[2] Konkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea
基金
瑞典研究理事会;
关键词
HIGH-SPEED; OXIDE; POWER; MODEL;
D O I
10.1063/1.3242337
中图分类号
O59 [应用物理学];
学科分类号
摘要
Time-dependent electroforming phenomena in NiO capacitors are investigated. Different current-voltage characteristics between dc sweep mode and pulse mode indicate that electroforming is time-dependent process. Statistical time-dependent dielectric breakdown (TDDB) measurements show the exponential dependence of electroforming time on applied voltage, confirming that forming process is not a spontaneous process at some critical voltage, but an upsurge process resulting from stress-induced defects. The statistical TDDB analysis explains not only the nature of electroforming process but also the anomalous forming and large variations in forming parameters. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3242337]
引用
收藏
页数:3
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