Two series oxide resistors applicable to high speed and high density nonvolatile memory

被引：403

作者：

Lee, Myoung-Jae ^{[1
]}

Park, Youngsoo

Suh, Dong-Seok

Lee, Eun-Hong

Seo, Sunae

Kim, Dong-Chirl

Jung, Ranju

Kang, Bo-Soo

Ahn, Seung-Eon

Lee, Chang Bum

Seo, David H.

Cha, Young-Kwan

Yoo, In-Kyeong

Kim, Jin-Soo

Park, Bae Ho

机构：

[1] Samsung Adv Inst Technol, Semicond Devices & Mat Lab, Suwon 440600, South Korea

[2] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

[3] Samsung Adv Inst Technol, Nano Fabricat Technol Ctr, Suwon 440600, South Korea

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 22期

关键词：

D O I：

10.1002/adma.200700251

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A memory cell consisting of a Pt/VO2/ Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than V-th of 0.6 V, the switch element reaches the on state and the cell can be accessed. Since reset and set voltages are higher than V-th, information can be written by simply applying an appropriate voltage to a selected cell. By applying a voltage lower than V-th to the other cells, we can keep the other cells in the off state and prevent interference between the selected cell and the others.

引用

页码：3919 / +

页数：6

共 14 条

[1] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].