Optical properties of near surface-InAs quantum dots and their formation processes

被引：18

作者：

Kamiya, I

Tanaka, I

Sakaki, H

机构：

[1] Japan Sci & Technol Corp, Quantum Transit Project, Meguro Ku, Tokyo 153, Japan

[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 153, Japan

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

关键词：

InAs; quantum dots; wetting layer; capping;

D O I：

10.1016/S1386-9477(98)00130-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The morphological evolution of thin layers of InAs deposited on (0 0 1)GaAs has been investigated by photoluminescence (PL) and atomic force microscopy (AFM). We observe PL features that correspond to the transformation of the InAs wetting layer and 2D islands into quantum dots (QDs), which is supported by the AFM study. Variation in the PL spectra is also observed as a function of the thickness of the GaAs layer deposited on top of the InAs layer. Luminescence intensity from both the QDs and the wetting layer (WL) picks up at a thickness of about 10-20 monolayers. As the thickness is increased, uprise in PL intensity for both QDs and WL together with a narrowing in the WL peak is observed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：637 / 642

页数：6

共 14 条

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