High growth rates and wall decoration of carbon nanotubes grown by plasma-enhanced chemical vapour deposition

被引：37

作者：

Morjan, RE

Maltsev, V

Nerushev, O

Yao, Y

Falk, LKL

Campbell, EEB ^{[1
]}

机构：

[1] Goteborg Univ & Chalmers, Dept Expt Phys, Sch Phys & Engn Phys, SE-41296 Gothenburg, Sweden

[2] Russian Acad Sci, Inst Thermophys, Novosibirsk 630090, Russia

来源：

CHEMICAL PHYSICS LETTERS | 2004年 / 383卷 / 3-4期

关键词：

D O I：

10.1016/j.cplett.2003.11.063

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

DC plasma-enhanced chemical vapour deposition (PECVD) was used to grow films of aligned carbon nanotubes on a silicon wafer using Fe as catalyst and a C(2)H(2)/H(2) gas mixture. The films were of high quality and showed an exceptionally high growth rate compared with other plasma growth techniques. For long growth times, the upper parts of the nanotubes developed additional outer graphite flakes. The onset of the 'tube decoration' correlates with a decrease in linear growth rate and can be related to the gradient of plasma parameters in the cathode sheath. (C) 2003 Published by Elsevier B.V.

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收藏

页码：385 / 390

页数：6

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