Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films

被引：64

作者：

Hong, Nguyen Hoa

Sakai, Joe

Gervais, Francois

机构：

[1] Univ Tours, CNRS CEA, UMR 6157, Lab LEMA, F-37200 Tours, France

[2] JAIST, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 316卷 / 02期

关键词：

ferromagnetic; semiconductor; thin film;

D O I：

10.1016/j.jmmm.2007.02.081

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Room temperature ferromagnetism was observed in HfO2, TiO2, and In2O3. films grown on yttrium-stabilized zirconia, LaAlO3, and MgO substrates, respectively. While the magnetic moment is rather modest in the case of In2O3 films, it is very large in the other two cases. Thin film form, which might create necessary defects and/or oxygen vacancies, must be the main reason for undoped semiconducting and insulating oxides to become ferromagnetic. From the results, a serious question arises if a transition-metal doping indeed plays any essential role in producing ferromagnetism (FM) in non-magnetic oxides. (C) 2007 Elsevier B.V. All rights reserved.

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页码：214 / 217

页数：4

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