Fatigue properties of oriented PZT ferroelectric thin films

被引：23

作者：

Le Rhun, G

Poullain, G

Bouregba, R

Leclerc, G

机构：

[1] Univ Caen, Lab CRISMAT, ENSICAEN, F-14050 Caen, France

[2] CNRS, UMR 6508, F-14050 Caen, France

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2005年 / 25卷 / 12期

关键词：

films; ferroelectric properties; fatigue; PZT;

D O I：

10.1016/j.jeurceramsoc.2005.03.046

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Oriented PZT thin films with Zr/Ti ratio of 60/40 were prepared using a multi-target R.F. sputtering system. The films were (1 0 0) or (1 1 1) oriented when grown on Pt/TiO2/SiO2/Si and exhibited c-axis epitaxial microstructure when deposited on Pt/MgO. Electrical measurements were performed in order to investigate the fatigue properties of the films. Fatigue characteristics of the Pt/PZT/Pt capacitors were found to be strongly dependent on their crystalline orientation: (1 1 1) and (0 0 1) oriented films exhibited poor fatigue endurance unlike (1 0 0) oriented films that did not fatigue. Lastly, almost full recovery of polarisation was obtained for c-axis epitaxial films while (1 1 1) oriented films showed only partial restoration. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：2281 / 2284

页数：4

共 15 条

[11] FERROELECTRIC MEMORIES [J].