Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes

The temperature dependencies of the current-voltage characteristics and the electroluminescence (EL) intensity of molecular beam epitaxy grown Er/O-doped Si light emitting diodes at reverse bias have been studied. To minimize the scattering of electrons injected from the p-doped Si1-xGex electron emitters, an intrinsic Si layer was used in the depletion region. For many diodes, there is a temperature range where the EL intensity increases with temperature. Data are reported for a structure that shows increasing intensity up to 100 degreesC. This is attributed to an increasing fraction of the pumping current being due to phonon-assisted tunneling, which gives a higher saturation intensity, compared to ionization-dominated breakdown at lower temperatures. (C) 2001 American Institute of Physics.