Ultrahigh External Quantum Efficiency from Thin SnO2 Nanowire Ultraviolet Photodetectors

被引：286

作者：

Hu, Linfeng ^{[1
]}

Yan, Jian ^{[2
]}

Liao, Meiyong ^{[3
]}

Wu, Limin ^{[1
]}

Fang, Xiaosheng ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

[2] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

[3] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

SMALL | 2011年 / 7卷 / 08期

基金：

中国国家自然科学基金;

关键词：

TIN OXIDE; ZNS NANOBELTS; LIGHT SENSORS; GAN; PHOTOCURRENT; MECHANISMS; GROWTH;

D O I：

10.1002/smll.201002379

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Thin SnO2 nanowires with uniform diameter and large surface-to-volume ratio are synthesized, and a single wire is used to fabricate a high-performance UV photodetector. An ultrahigh external quantum efficiency of 1.32 A× 107 is achieved, which is about four orders of magnitude larger than that of conventional SnO2 photodetectors. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1012 / 1017

页数：6

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