Kinetically driven growth instability in stressed solids

被引：82

作者：

Barvosa-Carter, W

Aziz, MJ

Gray, LJ

Kaplan, T

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Oak Ridge Natl Lab, Div Math & Comp Sci, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.81.1445

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a new stress-induced kinetically driven morphological instability for driven systems. The effect of stress on the interfacial mobility couples to stress variations along a perturbed planar growth front. Comparison of theory and experiment for solid phase epitaxy at a corrugated Si(001) interface, with no free parameters, indicates that the new mechanism is required to account for the observed growth of the corrugation amplitude. This mechanism operates in conjunction with known diffusional and elastic strain energy-driven instabilities in determining morphological evolution.

引用

页码：1445 / 1448

页数：4

共 26 条

[11]

GRAY LJ, IN PRESS COMP MECH

[12]

Grinfel'd M. A., 1986, Soviet Physics - Doklady, V31, P831

[13] MORPHOLOGICAL STABILITY OF ALLOY THIN-FILMS [J].