Very long SiC-based coaxial nanocables with tunable chemical composition

被引:90
作者
Bechelany, Mikhael
Brioude, Arnaud
Stadelmann, Pierre
Ferro, Gabriel
Cornu, David
Miele, Philippe
机构
[1] Univ Lyon 1, CNRS, Lab Multimat Interfaces, UMR 5615, F-69622 Villeurbanne, France
[2] Swiss Fed Inst Technol, Interdepartmental Ctr Electron Microscopy, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1002/adfm.200700110
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present a simple process for the fabrication of very long SiC-based coaxial nanocables (NCs). The versatility of this technique is confirmed by the ability to change the chemical composition of the NC outer layers from silica to carbon and boron nitride. The NCs consist of a SiC core approximately 30 nm in diameter with lengths up to several hundred of nanometers. The thickness of the coating is in the range 2-10 nm. The morphology and structural characterization of the NCs is investigated by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM), respectively, and their chemical composition is probed by electron energy loss spectroscopy (EELS). A vapor-solid growth mechanism is proposed to explain the growth of SiC-based NCs of various chemical compositions, depending on the chemical nature of the vapor phase. Because of the large quantity of very long and interlaced NCs produced during the synthesis, the macroscopic aspect of the as-grown material is like a self-supported felt.
引用
收藏
页码:3251 / 3257
页数:7
相关论文
共 33 条
[1]  
Bechelany M, 2006, J OPTOELECTRON ADV M, V8, P638
[2]  
BECHELANY M, 2006, Patent No. 2006067308
[3]   A Raman spectroscopy study of individual SiC nanowires [J].
Bechelany, Mikhael ;
Brioude, Arnaud ;
Cornu, David ;
Ferro, Gabriel ;
Miele, Philippe .
ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (06) :939-943
[4]   Anisotropic etching of SiC whiskers [J].
Cambaz, GZ ;
Yushin, GN ;
Gogotsi, Y ;
Lutsenko, VG .
NANO LETTERS, 2006, 6 (03) :548-551
[5]   Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review [J].
Casady, JB ;
Johnson, RW .
SOLID-STATE ELECTRONICS, 1996, 39 (10) :1409-1422
[6]   Methylene-bridged carbosilanes and polycarbosilanes as precursors to silicon carbide-from ceramic composites to SiC nanomaterials [J].
Cheng, QM ;
Interrante, LV ;
Lienhard, M ;
Shen, QH ;
Wu, ZZ .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (2-3) :233-241
[7]   SYNTHESIS AND CHARACTERIZATION OF CARBIDE NANORODS [J].
DAI, HJ ;
WONG, EW ;
LU, YZ ;
FAN, SS ;
LIEBER, CM .
NATURE, 1995, 375 (6534) :769-772
[8]   Multifunctional, catalytic nanowire membranes and the membrane-based 3D devices [J].
Dong, Wenjun ;
Cogbill, Andrew ;
Zhang, Tierui ;
Ghosh, Samrat ;
Tian, Z. Ryan .
JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (34) :16819-16822
[9]   The microstructural analysis of SiC nanorods synthesized through carbothermal reduction [J].
Gao, YH ;
Bando, Y ;
Kurashima, K ;
Sato, T .
SCRIPTA MATERIALIA, 2001, 44 (8-9) :1941-1944
[10]   Synthesizing boron nitride nanotubes filled with SiC nanowires by using carbon nanotubes as templates [J].
Han, WQ ;
Redlich, P ;
Ernst, F ;
Rühle, M .
APPLIED PHYSICS LETTERS, 1999, 75 (13) :1875-1877