980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition

被引：5

作者：

Yang, GW ^{[1
]}

Xu, ZT ^{[1
]}

Ma, XY ^{[1
]}

Xu, JY ^{[1
]}

Zhang, JM ^{[1
]}

Chen, LH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 13期

关键词：

D O I：

10.1049/el:19980944

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the fabrication of 980 nm InGaAs strained quantum well lasers with hybrid materials of InGaAsP as waveguide and AlGaAs as cladding grown by metal organic chemical vapour deposition. The InGaAs/InGaAsP/AlGaAs diode lasers (100 x 800 mu m) with broadened waveguide structure exhibit a threshold current of 180 mA, a slope efficiency of 1.0 W/A, and a high characteristic temperature coefficient (T-0) of 230 K.

引用

页码：1312 / 1313

页数：2

共 9 条

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