6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers

被引：33

作者：

Wade, JK ^{[1
]}

Mawst, LJ

Botez, D

Nabiev, RF

Jansen, M

Morris, JA

机构：

[1] Univ Wisconsin, Reed Ctr Photon, Madison, WI 53706 USA

[2] Coherent Inc, Laser Grp, Santa Clara, CA 95056 USA

[3] LDX Optron Inc, Maryville, TN 37801 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.120628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-free active-region diode lasers grown by low-pressure, metal-organic chemical vapor deposition and emitting at lambda=805 nm have been optimized for high continuous wave output power. The 1-mm-long devices consisting of an InGaAsP/In0.5Ga0.5P/In-0.5(Ga0.5Al0.5)(0.5)P laser structure have a threshold-current density, J(th), of 310 A/cm(2) and relatively high values for the characteristic temperatures of the threshold current, T-0 (135 K), and differential quantum efficiency, T-1 (900 K). Lasers with 10%/90% coatings and a 100-mu m-wide stripe provide a maximum cw output power of 6.1 W at a heatsink temperature of 10 degrees C. The devices fail due to catastrophic optical mirror damage (COMD), where the internal power density, <(P)over bar (COMD)> is 17.4 MW/cm(2); that is, twice that for conventionally facet-coated, 810 nm emitting, AlGaAs active-region diode lasers. (C) 1998 American institute of Physics.

引用

页码：4 / 6

页数：3

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