HIGHLY RELIABLE OPERATION OF HIGH-POWER INGAASP/INGAP/ALGAAS 0.8 MU-M SEPARATE-CONFINEMENT HETEROSTRUCTURE LASERS

被引：22

作者：

FUKUNAGA, T

WADA, M

ASANO, P

HAYAKAWA, T

机构：

[1] Miyanodai Technology Development Center, Fuji Photo Film Co. Ltd, Kaisei-machi, Ashigarakami-gun, Kanagawa, 258

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9B期

关键词：

QUANTUM WELL LASER; HIGH-POWER; AGING TEST; CATASTROPHIC OPTICAL DAMAGE; CHARACTERISTIC TEMPERATURE; THRESHOLD CURRENT; INGAASP; ALGAAS;

D O I：

10.1143/JJAP.34.L1175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the high-power and reliable operation of InGaAsP/InGaP/AlGaAs 0.8 mu m separate confinement heterostructure single-quantum-well laser diodes. High output power of 1.8 W is achieved from an anti-reflection- and high-reflection-coated device with stripe width of 50 mu m and cavity length of 1.25 mm. This device has high characteristic temperature of 164 K and low threshold current density of 300 A/cm(2). No catastrophic failure in the laser with 0.75 mm cavity length is observed during 1000 h aging test at 50 degrees C under an automatic power control of 500 mW. The effect of cavity length on laser characteristics is also discussed.

引用

页码：L1175 / L1177

页数：3

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