Impact of interface structure on Schottky-barrier height for Ni/ZrO2(001) interfaces -: art. no. 132103

被引：40

作者：

Dong, YF ^{[1
]}

Wang, SJ

Chai, JW

Feng, YP

Huan, ACH

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117602, Singapore

[2] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 13期

关键词：

D O I：

10.1063/1.1891285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Schottky-barrier heights for the Ni and ZrO2 interfaces have been determined using the x-ray photoemission method. Depending on the surface treatment of ZrO2, the variation of Schottky-barrier heights at Ni/ZrO2 interfaces was found as large as 0.76 +/- 0.10 eV. The p-type Schottky-barrier height for the oxygen-rich (oxygen-deficient) interface was measured to be 2.60 eV (3.36 eV). First-principles calculations provide a microscopic explanation of such variation, which was attributed to the different interface dipole formed by interfacial Ni-O, Ni-Zr bonds, or oxygen vacancies. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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