Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb

被引：12

作者：

Hanson, MP ^{[1
]}

Driscoll, DC ^{[1
]}

Kadow, C ^{[1
]}

Gossard, AC ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.1639932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the growth by molecular beam epitaxy of a metal/semiconductor composite consisting of epitaxial semimetallic ErSb particles in a GaSb matrix. The ErSb nucleates in an island growth mode leading to the spontaneous formation of nanometer-sized particles. These particles are found to preferentially grow along a [011] direction on a (100) GaSb surface. The particles can be overgrown with GaSb to form an epitaxial superlattice consisting of ErSb particles between GaSb spacer layers. The size of the ErSb particles increases monotonically with the deposition. The carrier concentrations in the superlattices are found to be dependent on both the size and density of the ErSb particles. Smaller particles and closer layer spacings reduce the hole concentration in the film. (C) 2004 American Institute of Physics.

引用

页码：221 / 223

页数：3

共 14 条

[1] COHERENT MILLIMETER-WAVE GENERATION BY HETERODYNE CONVERSION IN LOW-TEMPERATURE-GROWN GAAS PHOTOCONDUCTORS [J].

BROWN, ER ;

SMITH, FW ;

MCINTOSH, KA .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (03) :1480-1484

[2] 375-GHZ-BANDWIDTH PHOTOCONDUCTIVE DETECTOR [J].

CHEN, Y ;

WILLIAMSON, S ;

BROCK, T ;

SMITH, FW ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1991, 59 (16) :1984-1986

[3] Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures [J].

Dorn, A ;

Peter, M ;

Kicin, S ;

Ihn, T ;

Ensslin, K ;

Driscoll, D ;

Gossard, AC .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2631-2633

[4] Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrix [J].

Driscoll, DC ;

Hanson, MP ;

Mueller, E ;

Gossard, AC .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :243-247

[5] Electronic structure and conduction in a metal-semiconductor digital composite:: ErAs:InGaAs [J].

Driscoll, DC ;

Hanson, M ;

Kadow, C ;

Gossard, AC .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1703-1705

[6] The physics and technology of gallium antimonide: An emerging optoelectronic material [J].

Dutta, PS ;

Bhat, HL ;

Kumar, V .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :5821-5870

[7] ERSB/GASB(001) AND GASB/ERSB/GASB(001) HETEROSTRUCTURES AND [ERSB,GASB] SUPERLATTICES - MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION [J].

GUIVARCH, A ;

BALLINI, Y ;

TOUDIC, Y ;

MINIER, M ;

AUVRAY, P ;

GUENAIS, B ;

CAULET, J ;

LEMERDY, B ;

LAMBERT, B ;

REGRENY, A .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) :2876-2883

[8] Microstiructure and electronic characterization of InGaAs containing layers of self-assembled ErAs nanoparticles [J].

Hanson, MP ;

Driscoll, DC ;

Muller, E ;

Gossard, AC .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :602-605

[9] Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics [J].

Kadow, C ;

Fleischer, SB ;

Ibbetson, JP ;

Bowers, JE ;

Gossard, AC ;

Dong, JW ;

Palmstrom, CJ .

APPLIED PHYSICS LETTERS, 1999, 75 (22) :3548-3550

[10] Growth-temperature dependence of the microstructure of ErAs islands in GaAs [J].

Kadow, C ;

Johnson, JA ;

Kolstad, K ;

Gossard, AC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01) :29-32

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