Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures

被引：15

作者：

Dorn, A ^{[1
]}

Peter, M

Kicin, S

Ihn, T

Ensslin, K

Driscoll, D

Gossard, AC

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 16期

关键词：

D O I：

10.1063/1.1566793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled ErAs islands on GaAs embedded between a backgate electrode and a two-dimensional electron gas (2DEG) were grown by molecular-beam epitaxy. The nanometer-sized islands form Schottky barriers with overlapping depletion regions, which insulate the backgate from the 2DEG. From temperature-dependent measurements and charging experiments the effective barrier height between the islands and the Schottky barrier height onto the islands could be determined. In addition, the effects of illumination were studied. (C) 2003 American Institute of Physics.

引用

页码：2631 / 2633

页数：3

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