THE EFFECTS OF ION-BEAM ETCHING ON SI, GE, GAAS, AND INP SCHOTTKY-BARRIER DIODES

被引：14

作者：

WU, CS

SCOTT, DM

CHEN, WX

LAU, SS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 04期

关键词：

D O I：

10.1149/1.2113985

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：918 / 922

页数：5

共 22 条

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[8]

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