Controlled carrier depletion around nano-scale metal discs embedded in GaAs

被引：22

作者：

Wernersson, LE ^{[1
]}

Litwin, A ^{[1
]}

Samuelson, L ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] Lund Univ, Solid State Phys Nanometer Struct Consortium, S-22100 Lund, Sweden

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 12B期

关键词：

semi-insulating; nano-Schottky contacts; GaAs; tungsten; overgrowth;

D O I：

10.1143/JJAP.36.L1628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Matrices of uncontacted, nano-scale. tungsten discs, embedded in GaAs by epitaxial overgrowth, have been characterised electrically. By varying the spacing between the discs, it is demonstrated that when the disc separation is smaller than 300 nm (for a doping level of 10(16) cm(-3)), the conductance drops by seven orders of magnitude and the material becomes semi-insulating. The presence of the metal-induced barrier is deduced from the temperature dependence of the current transport. These results are discussed in terms of overlapping Schottky depletion regions around the discs.

引用

页码：L1628 / L1631

页数：4

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