Solution-Processable Graphene Oxide as an Efficient Hole Transport Layer in Polymer Solar Cells

被引：671

作者：

Li, Shao-Sian ^{[1
]}

Tu, Kun-Hua ^{[1
]}

Lin, Chih-Cheng ^{[1
]}

Chen, Chun-Wei ^{[1
]}

Chhowalla, Manish ^{[2
,3
]}

机构：

[1] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[3] Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USA

来源：

ACS NANO | 2010年 / 4卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

graphene oxide; organic photovoltaics; hole transport layers; organic electronics; ELECTRONIC-STRUCTURE; PERFORMANCE; SINGLE; TRANSPARENT; MORPHOLOGY; DEVICE;

D O I：

10.1021/nn100551j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The utilization of graphene oxide (GO) thin films as the hole transport and electron blocking layer in organic photovoltaics (OPVs) is demonstrated. The incorporation of GO deposited from neutral solutions between the photoactive poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) layer and the transparent and conducting indium tin oxide (ITO) leads to a decrease in recombination of electrons and holes and leakage currents. This results in a dramatic increase in the OPV efficiencies to values that are comparable to devices fabricated with PEDOT:PSS as the hole transport layer. Our results indicate that GO could be a simple solution-processable alternative to PEDOT:PSS as the effective hole transport and electron blocking layer in OPV and light-emitting diode devices.

引用

页码：3169 / 3174

页数：6

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