Shot noise suppression and hopping conduction in graphene nanoribbons

被引：20

作者：

Danneau, R. ^{[1
,2
,3
]}

Wu, F. ^{[1
]}

Tomi, M. Y. ^{[1
]}

Oostinga, J. B. ^{[4
,5
]}

Morpurgo, A. F. ^{[4
,5
]}

Hakonen, P. J. ^{[1
]}

机构：

[1] Aalto Univ, Low Temp Lab, FI-00076 Aalto, Finland

[2] Karlsruhe Inst Technol, Inst Nanotechnol, D-76021 Karlsruhe, Germany

[3] Karlsruhe Inst Technol, Inst Phys, D-76128 Karlsruhe, Germany

[4] Univ Geneva, DPMC, CH-1211 Geneva, Switzerland

[5] Univ Geneva, GAP, CH-1211 Geneva, Switzerland

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 16期

基金：

芬兰科学院;

关键词：

CARBON NANOTUBES; BILAYER GRAPHENE; LOCALIZED STATES; TRANSPORT;

D O I：

10.1103/PhysRevB.82.161405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated shot noise and conduction of graphene field-effect nanoribbon devices at low temperature. By analyzing the exponential I-V characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages 1 < V-bias < 12 mV. In parallel, we observe a strong shot noise suppression leading to very low Fano factors. The strong suppression of shot noise is consistent with inelastic hopping, in crossover from one-to two-dimensional regime, indicating that the localization length l(loc) < W in our nanoribbons.

引用

页数：4

共 53 条

[1] Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons [J].