Surface, bulk, and interface electronic properties of nonpolar InN

被引：31

作者：

Linhart, W. M. ^{[1
]}

Veal, T. D. ^{[1
]}

King, P. D. C. ^{[1
]}

Koblmueller, G. ^{[2
,3
]}

Gallinat, C. S. ^{[2
]}

Speck, J. S. ^{[2
]}

McConville, C. F. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

electronic density of states; Fermi level; III-V semiconductors; indium compounds; infrared spectra; interface states; reflectivity; semiconductor thin films; space charge; surface states; wide band gap semiconductors; X-ray photoelectron spectra; POLAR; GAN;

D O I：

10.1063/1.3488821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic properties of a-plane and m-plane InN have been investigated by x-ray photoemission spectroscopy, infrared reflectivity, and surface space-charge calculations. Electron accumulation has been observed at the surface of nonpolar InN and the surface Fermi level has been found to be lower than previously observed on InN samples. A high electron density in the InN close to the interface with GaN was found in each nonpolar InN sample. (c) 2010 American Institute of Physics. [doi:10.1063/1.3488821]

引用

页数：3

共 30 条

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