Unintentional conductivity of indium nitride: transport modelling and microscopic origins

被引：37

作者：

King, P. D. C. ^{[1
]}

Veal, T. D. ^{[1
]}

McConville, C. F. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

FUNDAMENTAL-BAND GAP; ELECTRON ACCUMULATION; SYNCHROTRON-RADIATION; TERAHERTZ EMISSION; HEXAGONAL INN; POLAR INN; NONPOLAR; GROWTH; SEMICONDUCTORS; ABSORPTION;

D O I：

10.1088/0953-8984/21/17/174201

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.

引用

页数：7

共 98 条

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