Terahertz emission from vertically aligned InN nanorod arrays

被引：51

作者：

Ahn, H. ^{[1
]}

Ku, Y. -P.

Wang, Y. -C.

Chuang, C. -H.

Gwo, S.

Pan, Ci-Ling

机构：

[1] Natl Chiao Tung Univ, Dept Photonics, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期

关键词：

D O I：

10.1063/1.2789183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Terahertz emission from indium nitride (InN) nanorods and InN film grown by molecular-beam epitaxy on Si(111) substrates has been investigated. Terahertz emission from InN nanorods is at least three times more intense than that from InN film and depends strongly on the size distribution of the nanorods. Surface electron accumulation at the InN nanorods effectively screens out the photo-Dember field in the accumulation layer formed under the surface. The nanorods with considerably large diameter than the thickness of accumulation layer are found to be dominant in the emission of terahertz radiation from InN nanorod arrays. (c) 2007 American Institute of Physics.

引用

页数：3

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