Excitation wavelength dependence of terahertz emission from InN and InAs

被引：70

作者：

Chern, Grace D.

Readinger, Eric D.

Shen, Hongen

Wraback, Michael

Gallinat, Chad S.

Koblmuller, Gregor

Speck, James S.

机构：

[1] USA, Res Lab, Sensors & Electron Devices Directorate, AMSRD ARL SE EM, Adelphi, MD 20783 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 14期

关键词：

D O I：

10.1063/1.2358938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the excitation wavelength dependence of terahertz emission from n-InN and bulk p-InAs pumped with femtosecond pulses tunable from 800 to 1500 nm. The terahertz amplitude, normalized to pump and probe power, from both narrow band gap semiconductors remains relatively constant over the excitation wavelength range. In addition, terahertz radiation from In- and N-face InN samples with bulk carrier concentrations ranging from 10(17) to 10(19) cm(-3) is also investigated, showing a strong dependence of terahertz emission on bulk carrier concentration. The experimental results agree well with calculations based on drift-diffusion equations incorporating momentum conservation and relaxation. (c) 2006 American Institute of Physics.

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