Intense terahertz emission from a-plane InN surface

被引：41

作者：

Ahn, H. ^{[1
,2
]}

Ku, Y. -P. ^{[1
,2
]}

Chuang, C. -H. ^{[1
,2
]}

Pan, C. -L. ^{[1
,2
]}

Lin, H. -W. ^{[3
]}

Hong, Y. -L. ^{[3
]}

Gwo, S. ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

关键词：

D O I：

10.1063/1.2892655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a significant enhancement in terahertz emission from the indium nitride (InN) films grown along the a axis (a-plane InN), relative to the InN films grown along the c axis. The primary radiation mechanism of the a-plane InN film is found to be due to the acceleration of photoexcited carriers under the polarization-induced in-plane electric field perpendicular to the a axis, which effectively enhances the geometrical coupling of the radiation out of semiconductor. In addition, azimuthal angle dependence measurement shows that the p-polarized terahertz output consists of a large angularly independent component and a weak component with a distinctive fourfold rotation symmetry. (c) 2008 American Institute of Physics.

引用

页数：3

共 16 条

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