Magnetic-field-induced fourfold azimuthal angle dependence in the terahertz radiation power of (100)InAs

被引:20
作者
Estacio, Elmer
Sumikura, Hisashi
Murakami, Hidetoshi
Tani, Masahiko
Sarukura, Nobuhiko
Hangyo, Masanori
Ponseca, Carlito, Jr.
Pobre, Romeric
Quiroga, Reuben
Ono, Shingo
机构
[1] Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan
[2] Inst Mol Sci, Okazaki, Aichi 4448555, Japan
[3] Nagoya Inst Technol, Showa Ku, Nagoya, Aichi 4668555, Japan
[4] De La Salle Univ, Dept Phys, Manila 1004, Philippines
基金
日本学术振兴会;
关键词
D O I
10.1063/1.2721385
中图分类号
O59 [应用物理学];
学科分类号
摘要
The azimuthal angle dependence in the terahertz radiation power of (100) InAs under 1 T magnetic field is presented. Results show that although the dominant radiation mechanism is surge current, azimuthal-angle-dependent radiation due to the nonlinear effect is also observed. The twofold symmetry of the p-polarized terahertz radiation power was modified to a fourfold symmetry with the transverse magnetic field. Moreover, results exhibited fourfold symmetry for the s-polarized terahertz power even with no applied field. The anisotropic intervalley scattering of photocarriers is tentatively proposed as the origin of quadrupole response and the fourfold emission symmetry. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 22 条
[2]   Spectral dependencies of terahertz emission from InAs and InSb [J].
Adomavicius, R ;
Molis, G ;
Krotkus, A ;
Sirutkaitis, V .
APPLIED PHYSICS LETTERS, 2005, 87 (26) :1-3
[3]   Terahertz emission from p-InAs due to the instantaneous polarization [J].
Adomavicius, R ;
Urbanowicz, A ;
Molis, G ;
Krotkus, A ;
Satkovskis, E .
APPLIED PHYSICS LETTERS, 2004, 85 (13) :2463-2465
[4]   Terahertz emission from Ga1-xInxSb [J].
Ascazubi, Ricardo ;
Wilke, Ingrid ;
Kim, K. J. ;
Dutta, Partha .
PHYSICAL REVIEW B, 2006, 74 (07)
[5]  
BIRSS RR, 1966, SYMMETRY MAGNETISM, P62
[6]   Excitation wavelength dependence of terahertz emission from InN and InAs [J].
Chern, Grace D. ;
Readinger, Eric D. ;
Shen, Hongen ;
Wraback, Michael ;
Gallinat, Chad S. ;
Koblmuller, Gregor ;
Speck, James S. .
APPLIED PHYSICS LETTERS, 2006, 89 (14)
[7]   Terahertz radiation from semiconductor surfaces [J].
Gu, P ;
Tani, M .
TERAHERTZ OPTOELECTRONICS, 2005, 97 :63-97
[8]   Theory of magnetic-field enhancement of surface-field terahertz emission [J].
Johnston, MB ;
Whittaker, DM ;
Corchia, A ;
Davies, AG ;
Linfield, EH .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) :2104-2106
[9]   Simulation of terahertz generation at semiconductor surfaces [J].
Johnston, MB ;
Whittaker, DM ;
Corchia, A ;
Davies, AG ;
Linfield, EH .
PHYSICAL REVIEW B, 2002, 65 (16)
[10]   Terahertz radiation from InAs induced by carrier diffusion and drift [J].
Liu, K ;
Xu, JZ ;
Yuan, T ;
Zhang, XC .
PHYSICAL REVIEW B, 2006, 73 (15)