High efficient terahertz emission from InN surfaces

被引：19

作者：

Cimalla, Volker

Pradarutti, Boris

Matthaeus, Gabor

Brueckner, Claudia

Rjehemann, Stefan

Notni, Gunther

Nolte, Stefan

Tuennermann, Andreas

Lebedev, Vadim

Ambacher, Oliver

机构：

[1] Tech Univ Ilmenau, Inst Micro & Nanotechnol, D-98684 Ilmenau, Germany

[2] Fraunhofer IOF, D-07745 Jena, Germany

[3] Inst Appl Phys, D-07743 Jena, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 06期

关键词：

D O I：

10.1002/pssb.200674893

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Terahertz radiation was measured from InN and compared to p-InAs excited by femtosecond optical pulses at 1060 and 800 mn. At 800 mn, atomically smooth InN with low background electron concentration exhibit higher THz emission than the highly effective material p-InAs. The higher THz emission efficiency of InN is caused by the absences of any intervalley scattering, which in the case of InAs increases the effective mass of the photo generated electrons and, thus, reduces the Dember field, which is responsible for THz emission. Consequently, InN is a promising material for THz emission; however, further improvement of the material quality (surface roughness and carrier concentration) is needed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1829 / 1833

页数：5

共 11 条

[1] Enhanced terahertz emission from impurity compensated GaSb -: art. no. 045328 [J].

Ascázubi, R ;

Shneider, C ;

Wilke, I ;

Pino, R ;

Dutta, PS .

PHYSICAL REVIEW B, 2005, 72 (04)

[2] Terahertz emission by InN [J].

Ascázubi, R ;

Wilke, I ;

Denniston, K ;

Lu, H ;

Schaff, WJ .

APPLIED PHYSICS LETTERS, 2004, 84 (23) :4810-4812

[3] Energy gap and optical properties of InxGal1-xN [J].

Bechstedt, F ;

Furthmüller, J ;

Ferhat, M ;

Teles, LK ;

Scolfaro, LMR ;

Leite, JR ;

Davydov, VY ;

Ambacher, O ;

Goldhahn, R .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (03) :628-633

[4] Hole transport and carrier lifetime in InN epilayers [J].

Chen, F ;

Cartwright, AN ;

Lu, H ;

Schaff, WJ .

APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3

[5] Surface band bending at nominally undoped and Mg-doped InN by Auger electron spectroscopy [J].

Cimalla, V ;

Niebelschütz, M ;

Ecke, G ;

Lebedev, V ;

Ambacher, O ;

Himmerlich, M ;

Krischok, S ;

Schaefer, JA ;

Lu, H ;

Schaff, WJ .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (01) :59-65

[6] Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys [J].

Goldhahn, R ;

Schley, P ;

Winzer, AT ;

Gobsch, G ;

Cimalla, V ;

Ambacher, O ;

Rakel, M ;

Cobet, C ;

Esser, N ;

Lu, H ;

Schaff, WJ .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (01) :42-49

[7] Simulation of terahertz generation at semiconductor surfaces [J].

Johnston, MB ;

Whittaker, DM ;

Corchia, A ;

Davies, AG ;

Linfield, EH .

PHYSICAL REVIEW B, 2002, 65 (16)

[8] Effect of dislocations on electrical and electron transport properties of InN thin films.: II.: Density and mobility of the carriers [J].

Lebedev, V. ;

Cimalla, V. ;

Baumann, T. ;

Ambacher, O. ;

Morales, F. M. ;

Lozano, J. G. ;

Gonzalez, D. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (09)

[9] Effect of dislocations on electrical and electron transport properties of InN thin films.: I.: Strain relief and formation of a dislocation network [J].

Lebedev, V. ;

Cimalla, V. ;

Pezoldt, J. ;

Himmerlich, M. ;

Krischok, S. ;

Schaefer, J. A. ;

Ambacher, O. ;

Morales, F. M. ;

Lozano, J. G. ;

Gonzalez, D. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (09)

[10] InN as THz Emitter excited at 1060 nm and 800 nm [J].

Pradarutti, Boris ;

Matthaeus, Gabor ;

Brueckner, Claudia ;

Riehemann, Stefan ;

Notni, Gunther ;

Nolte, Stefan ;

Cimalla, Volker ;

Lebedev, Vadim ;

Ambacher, Oliver ;

Tuennermann, Andreas .

MILLIMETER-WAVE AND TERAHERTZ PHOTONICS, 2006, 6194

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