Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

被引：22

作者：

Darakchieva, V. ^{[1
,2
]}

Schubert, M. ^{[3
]}

Hofmann, T. ^{[3
]}

Monemar, B. ^{[2
]}

Hsiao, Ching-Lien ^{[4
]}

Liu, Ting-Wei ^{[4
]}

Chen, Li-Chyong ^{[4
]}

Schaff, W. J. ^{[5
]}

Takagi, Y. ^{[6
]}

Nanishi, Y. ^{[6
]}

机构：

[1] Inst Tecnol & Nucl, P-2686953 Sacavem, Portugal

[2] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[3] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[4] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[5] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[6] Ritsumeikan Univ, Dept Photon, Shiga 5258577, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 20期

关键词：

accumulation layers; electron density; electron mobility; III-V semiconductors; indium compounds; semiconductor thin films; surface charging; wide band gap semiconductors; GROWTH; SAPPHIRE;

D O I：

10.1063/1.3261731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The free electron properties of nonpolar (1120)-oriented and semipolar (1011)-oriented wurtzite InN films are studied by generalized infrared ellipsometry (GIRSE). We demonstrate the sensitivity of GIRSE to the surface charge accumulation layer and find a distinct surface electron accumulation to occur at all surfaces. The obtained surface electron sheet densities are found to vary from 0.9x10(13) to 2.3x10(14) cm(-2) depending on the surface orientation and bulk electron concentration. The upper limits of the surface electron mobility parameters of 417-644 cm(2)/V s are determined and discussed in the light of electron confinement at the surface.

引用

页数：3

共 18 条

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