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Reduced surface electron accumulation at InN films by ozone induced oxidation

被引：34
作者：
Cimalla, V. [1 ]
Lebedev, V.
Wang, Ch. Y.
Ali, M.
Ecke, G.
Polyakov, V. M.
Schwierz, F.
Ambacher, O.
Lu, H.
Schaff, W. J.
机构：
[1] Tech Univ Ilmenau, Inst Micro & Nanotechnol, Kirchhoffstr 7, D-98693 Ilmenau, Germany
[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期
关键词：
D O I：
10.1063/1.2721365
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A room temperature ozone induced oxidation of thin InN films is proposed to improve the electric transport properties. The sheet carrier density is reduced upon oxidation by a value which is in the order of the electron concentration of an untreated InN surface. Thus, ozone effectively passivates the surface defect states on InN and might be an effective method to prepare InN films for electronic applications. A model for the improved electron transport properties is proposed taking into account the decreased surface band bending and the decreased influence of surface electrons on the net mobility of InN layers. (c) 2007 American Institute of Physics.
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页数：3
相关论文
共 21 条
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