Surface chemical modification of InN for sensor applications

被引：117

作者：

Lu, H ^{[1
]}

Schaff, WJ ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 06期

关键词：

D O I：

10.1063/1.1767608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of chemical exposures on the InN surface is reported. InN surface shows a fast capture, slow release, responsivity, and selectivity to certain solvent exposures, such as methanol and water. Enhancement in sheet carrier density as large as 7x10(12) cm(-2) with a simultaneous increase in Hall mobility of thin InN films was determined by Hall measurements. A corresponding reduction in sheet resistance of more than 30% was measured on a 20 nm InN film. The added electrons are likely to be surface carriers whose density decays after the solvent fully evaporates. This study shows the promise of using the sensitive InN surface for sensor applications. (C) 2004 American Institute of Physics.

引用

页码：3577 / 3579

页数：3

共 19 条

[1] Growth of cubic InN on r-plane sapphire
Cimalla, V
Pezoldt, J
Ecke, G
Kosiba, R
Ambacher, O
Spiess, L
Teichert, G
Lu, H
Schaff, WJ
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (17) : 3468 - 3470
[2] Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO
[3] 2-O
[4] The implications of spontaneous polarization effects for carrier transport measurements in GaN
Harris, JJ
Lee, KJ
Webb, JB
Tang, H
Harrison, I
Flannery, LB
Cheng, TS
Foxon, CT
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (04) : 413 - 417
[5] Gateless AlGaN/GaN HEMT response to block co-polymers
Kang, BS
Louche, G
Duran, RS
Gnanou, Y
Pearton, SJ
Ren, F
[J]. SOLID-STATE ELECTRONICS, 2004, 48 (05) : 851 - 854
[6] Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
Karrer, U
Ambacher, O
Stutzmann, M
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (13) : 2012 - 2014
[7] Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
Lu, H
Schaff, WJ
Eastman, LF
Wu, J
Walukiewicz, W
Cimalla, V
Ambacher, O
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (06) : 1136 - 1138
[8] Surface charge accumulation of InN films grown by molecular-beam epitaxy
Lu, H
Schaff, WJ
Eastman, LF
Stutz, CE
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (11) : 1736 - 1738
[9] LU H, 2001, MATER RES SOC S P, V693, P5
[10] Origin of electron accumulation at wurtzite InN surfaces -: art. no. 201307
Mahboob, I
Veal, TD
Piper, LFJ
McConville, CF
Lu, H
Schaff, WJ
Furthmüller, J
Bechstedt, F
[J]. PHYSICAL REVIEW B, 2004, 69 (20) : 201307 - 1

← 1 2 →