Effect of MBE growth conditions on multiple electron transport in InN

被引：9

作者：

Fehlberg, Tamara B. ^{[1
]}

Gallinat, Chad S. ^{[2
]}

Umana-Membreno, Gilberto A. ^{[1
]}

Koblmueller, Gregor ^{[2
]}

Nener, Brett D. ^{[1
]}

Speck, James S. ^{[2
]}

Parish, Giacinta ^{[1
]}

机构：

[1] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 05期

关键词：

InN; transport; QMSA; multiple carrier analysis; MBE growth;

D O I：

10.1007/s11664-007-0345-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A quantitative mobility spectrum analysis (QMSA) of multiple magnetic field data has been used to determine the transport properties of bulk and surface electron species in InN films, grown by plasma-assisted molecular beam epitaxy (PAMBE) with varying substrate temperatures and In/N flux ratios. While all films have similar bulk electron densities,similar to 4 x 10(17) cm(-3), the highest mobility was obtained in the highest growth temperature film (3100 cm(2)/V s at 150 K), while In-rich growth also gave good mobility values even at a much lower growth temperature. The surface sheet electron concentration increased with surface roughness, which increased with N-flux during growth.

引用

页码：593 / 596

页数：4

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