Characterisation of multiple carrier transport in indium nitride, grown by molecular beam epitaxy

Transport properties of two distinct electron species in indium nitride grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity voltages were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of the two electron species; attributed to the bulk electrons and a surface accumulation layer. Single magnetic field data corresponds to neither electron species. The bulk electron distribution has an extracted average mobility of 3570cm(2)/(Vs) at 300 K, which rises to over 5100cm(2)/(Vs) at 150 K. Bulk electron concentration in the sample is 1.5 x 10(17) cm(-3). The surface electrons have a higher sheet charge density and an order of magnitude lower average mobility than those in the bulk.