Evidence for p-type doping of InN

被引：192

作者：

Jones, RE ^{[1
]}

Yu, KM

Li, SX

Walukiewicz, W

Ager, JW

Haller, EE

Lu, H

Schaff, WJ

机构：

[1] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.96.125505

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The first evidence of successful p-type doping of InN is presented. It is shown that InNMg films consist of a p-type bulk region with a thin n-type inversion layer at the surface that prevents electrical contact to the bulk. Capacitance-voltage measurements indicate a net concentration of ionized acceptors below the n-type surface. Irradiation with 2 MeV He+ ions is used to convert the bulk of InNMg from p to n-type, at which point photoluminescence is recovered. The conversion is well explained by a model assuming two parallel conducting layers (the surface and the bulk) in the films.

引用

页数：4

共 15 条

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