Native-defect-controlled n-type conductivity in InN

High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H+ and He+ particles to study the dependence of the electron mobility on electron concentrations varying from mid-10(18) to mid-10(20) cm(-3). We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors. (c) 2005 Published by Elsevier B.V.