Improved quantitative mobility spectrum analysis for Hall characterization

被引:118
作者
Vurgaftman, I
Meyer, JR
Hoffman, CA
Redfern, D
Antoszewski, J
Faraone, L
Lindemuth, JR
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Univ Western Australia, Dept Elect & Elect Engn, Nedlands, WA 6907, Australia
[3] LakeShore Cryotron Inc, Westerville, OH 43082 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.368741
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an improved quantitative mobility spectrum analysis (i-QMSA) procedure for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity measurements on bulk or layered semiconductor samples. The i-QMSA technique is based on a fundamentally new approach, which optimizes the fit to the conductivity tensor components and their slopes by making those adjustments in the mobility spectra that result in the greatest error reduction. Empirical procedures for manipulating the mobility spectra are also introduced, with the dual purpose of reducing the error of the fit and simplifying the shape of the spectra to minimize the presence of unphysical artifacts. A fully automated computer implementation of the improved QMSA is applied to representative synthetic and real data sets involving various semiconductor material systems. These results show that, as compared with previous approaches, the presented algorithm maximizes the information that may be extracted from a given data set, and is suitable for use as a standard tool in the characterization of semiconductor material and device transport properties. (C) 1998 American Institute of Physics. [S0021-8979(98)07321-6].
引用
收藏
页码:4966 / 4973
页数:8
相关论文
共 11 条
[1]   MAGNETOTRANSPORT CHARACTERIZATION USING QUANTITATIVE MOBILITY-SPECTRUM ANALYSIS [J].
ANTOSZEWSKI, J ;
SEYMOUR, DJ ;
FARAONE, L ;
MEYER, JR ;
HOFFMAN, CA .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (09) :1255-1262
[2]   DETERMINATION OF ELECTRICAL TRANSPORT-PROPERTIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE [J].
BECK, WA ;
ANDERSON, JR .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :541-544
[3]   ANALYSIS OF THE ELECTRICAL-CONDUCTION USING AN ITERATIVE METHOD [J].
DZIUBA, Z ;
GORSKA, M .
JOURNAL DE PHYSIQUE III, 1992, 2 (01) :99-110
[4]   MOBILITY SPECTRUM ANALYSIS OF THE ELECTRICAL-CONDUCTION [J].
DZIUBA, Z .
ACTA PHYSICA POLONICA A, 1991, 80 (06) :827-839
[5]   HALL COEFFICIENT AND TRANSVERSE MAGNETORESISTANCE IN HGTE AT 4.2 DEGREES K AND 77 DEGREES K [J].
HARMAN, TC ;
HONIG, JM ;
TRENT, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) :1995-&
[6]   NEGATIVE ENERGY-GAP IN HGTE-CDTE HETEROSTRUCTURES WITH THICK WELLS [J].
HOFFMAN, CA ;
MEYER, JR ;
BARTOLI, FJ ;
LANSARI, Y ;
COOK, JW ;
SCHETZINA, JF .
PHYSICAL REVIEW B, 1989, 40 (06) :3867-3871
[7]   MULTICARRIER CHARACTERIZATION METHOD FOR EXTRACTING MOBILITIES AND CARRIER DENSITIES OF SEMICONDUCTORS FROM VARIABLE MAGNETIC-FIELD MEASUREMENTS [J].
KIM, JS ;
SEILER, DG ;
TSENG, WF .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8324-8335
[8]   Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors [J].
Meyer, JR ;
Hoffman, CA ;
Antoszewski, J ;
Faraone, L .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) :709-713
[9]   Advanced magneto-transport characterization of LPE-Grown Hg1-xCdxTe by quantitative mobility spectrum analysis [J].
Meyer, JR ;
Hoffman, CA ;
Bartoli, FJ ;
Antoszewski, J ;
Faraone, L ;
Tobin, SP ;
Norton, PW ;
Ard, CK ;
Reese, DJ ;
Colombo, L ;
Liao, PK .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (08) :1157-1164
[10]   METHODS FOR MAGNETOTRANSPORT CHARACTERIZATION OF IR DETECTOR MATERIALS [J].
MEYER, JR ;
HOFFMAN, CA ;
BARTOLI, FJ ;
ARNOLD, DA ;
SIVANANTHAN, S ;
FAURIE, JP .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) :805-823