Atomic-resolution incoherent high-angle annular dark field STEM images of Si(011)

被引:11
作者
Watanabe, F [1 ]
Yamazaki, T
Kikuchi, Y
Kotaka, Y
Kawasaki, M
Hashimoto, I
Shiojiri, M
机构
[1] Tokyo Metropolitan Coll Technol, 1-10-40 Higashiohi, Tokyo 1400011, Japan
[2] Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan
[3] Fujitsu Labs Ltd, Mat & Mat Engn Labs, Atsugi, Kanagawa 2430197, Japan
[4] JEOL USA Inc, Peabody, MA 01960 USA
[5] Kanazawa Med Univ, Dept Anat, Kanazawa, Ishikawa 9200293, Japan
[6] Kyoto Inst Technol, Kyoto 6068585, Japan
关键词
D O I
10.1103/PhysRevB.63.085316
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Characteristic atomic-resolution incoherent high-angle annular dark field (HAADF) scanning transmission electron microscope (STEM) images of [011]-orientated Si have been experimentally obtained by a through-focal series. Artificial bright spots appear at positions where no atomic columns exist along the electron beam, in some experimental images. Image simulation, based on the Bloch wave description by the Bethe method, reproduces the through-focal experimental images. It is shown that atomic-resolution HAADF STEM images, which are greatly influenced by the Bloch wave field depending on the incident electron beam probe, cannot always be interpreted intuitively as the projected atomic images. It is also found that the atomic-resolution HAADF STEM images can be simply explained using the relations to the probe functions without the need for complex dynamical simulations.
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页数:5
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