Multiferroics:: Towards a magnetoelectric memory

被引：1370

作者：

Bibes, Manuel ^{[1
]}

Barthelemy, Agnes ^{[1
]}

机构：

[1] CNRS Thales, Unite Mixte Phys, F-91767 Palaiseau, France

来源：

NATURE MATERIALS | 2008年 / 7卷 / 06期

关键词：

D O I：

10.1038/nmat2189

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The room temperature manipulation of magnetization by an electric field using the multiferroic BiFeO3represents an essential step towards the magnetoelectric control of spintronics devices. The coexistence of several order parameters and the magnetoelectric coupling can both be exploited in new types of memory elements with multiferroics. The electrical control of magnetization through the magnetoelectric coupling offers the opportunity of combining the respective advantages of FeRAMs and MRAMs in the form of non-volatile magnetic storage bits that are switched by an electrical field. BiFeO3is a rhombohedral perovskite, exhibiting antiferromagnetism, and is suitable for MERAMS. The ferroelectric polarization and the antiferromagnetic vector in BiFeO3are coupled, so that reversing the polarization by an electric field also rotates the antiferromagnetic spins.

引用

页码：425 / 426

页数：2

共 14 条

[1] Spin-polarized current switching of a Co thin film nanomagnet
Albert, FJ
Katine, JA
Buhrman, RA
Ralph, DC
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (23) : 3809 - 3811
[2] Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films
Bea, H.
Bibes, M.
Ott, F.
Dupe, B.
Zhu, X. -H.
Petit, S.
Fusil, S.
Deranlot, C.
Bouzehouane, K.
Barthelemy, A.
[J]. PHYSICAL REVIEW LETTERS, 2008, 100 (01)
[3] Magnetoelectronics with magnetoelectrics
Binek, C
Doudin, B
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (02) : L39 - L44
[4] Electric-field control of local ferromagnetism using a magnetoelectric multiferroic
Chu, Ying-Hao
Martin, Lane W.
Holcomb, Mikel B.
Gajek, Martin
Han, Shu-Jen
He, Qing
Balke, Nina
Yang, Chan-Ho
Lee, Donkoun
Hu, Wei
Zhan, Qian
Yang, Pei-Ling
Fraile-Rodriguez, Arantxa
Scholl, Andreas
Wang, Shan X.
Ramesh, R.
[J]. NATURE MATERIALS, 2008, 7 (06) : 478 - 482
[5] Multiferroic and magnetoelectric materials
Eerenstein, W.
Mathur, N. D.
Scott, J. F.
[J]. NATURE, 2006, 442 (7104) : 759 - 765
[6] Tunnel junctions with multiferroic barriers
Gajek, Martin
Bibes, Manuel
Fusil, Stephane
Bouzehouane, Karim
Fontcuberta, Josep
Barthelemy, Agnes
Fert, Albert
[J]. NATURE MATERIALS, 2007, 6 (04) : 296 - 302
[7] Electric polarization reversal and memory in a multiferroic material induced by magnetic fields
Hur, N
Park, S
Sharma, PA
Ahn, JS
Guha, S
Cheong, SW
[J]. NATURE, 2004, 429 (6990) : 392 - 395
[8] 2 Mb SPRAM (SPin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read
Kawahara, Takayuki
Takemura, Riichiro
Miura, Katsuya
Hayakawa, Jun
Ikeda, Shoji
Lee, Young Min
Sasaki, Ryutaro
Goto, Yasushi
Ito, Kenchi
Meguro, Toshiyasu
Matsukura, Fumihiro
Takahashi, Hiromasa
Matsuoka, Hideyuki
Ohno, Hideo
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (01) : 109 - 120
[9] Magnetic control of ferroelectric polarization
Kimura, T
Goto, T
Shintani, H
Ishizaka, K
Arima, T
Tokura, Y
[J]. NATURE, 2003, 426 (6962) : 55 - 58
[10] Electric-field control of exchange bias in multiferroic epitaxial heterostructures
Laukhin, V.
Skumryev, V.
Marti, X.
Hrabovsky, D.
Sanchez, F.
Garcia-Cuenca, M. V.
Ferrater, C.
Varela, M.
Lueders, U.
Bobo, J. F.
Fontcuberta, J.
[J]. PHYSICAL REVIEW LETTERS, 2006, 97 (22)

← 1 2 →