Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering

被引:30
作者
Dogheche, E
Rémiens, D
Boudrioua, A
Loulergue, JC
机构
[1] Univ Valenciennes & Hainaut, Lab Mat Avances Ceram, F-59304 Valenciennes, France
[2] Univ Metz & Supelec, Ctr Lorrain Opt & Elect Solide, Lab Mat Opt Proprietes Spec, F-57070 Metz, France
关键词
D O I
10.1063/1.123501
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly textured hexagonal aluminum nitride (AlN) thin films were deposited on silicon substrates by radio-frequency magnetron sputtering at a substrate temperature below 400 degrees C and annealed in the temperature range of 400-450 degrees C by rapid thermal annealing. The optical and the electro-optical properties have been investigated using the prism-coupling technique. Both ordinary and extraordinary refractive indices (n(o) = 2.0058 and n(e) = 2.0374 at 632.8 nm) were respectively determined from the transverse electric and the transverse magnetic mode excitations. Furthermore, refractive index profiles analysis by using an improved inverse Wentzel-Kramer-Brillouin method reveals a step-like behavior of AlN thin films. The optical losses have been evaluated to be around 7 dB cm(-1). The electro-optic coefficient r(13) of 0.98 pm/V has been measured from the variation of the shift of guided-modes spectrum as a function of the applied electric field in the experiment. (C) 1999 American Institute of Physics. [S0003-6951(99)03709-2].
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页码:1209 / 1211
页数:3
相关论文
共 14 条
[11]  
ROSKOVCOVA L, 1967, PHYS STATUS SOLIDI, V20, pK29
[12]   GAN, AIN, AND INN - A REVIEW [J].
STRITE, S ;
MORKOC, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1237-1266
[13]   Dispersion properties of aluminum nitride as measured by an optical waveguide technique [J].
Tang, X ;
Yuan, YF ;
Wongchotigul, K ;
Spencer, MG .
APPLIED PHYSICS LETTERS, 1997, 70 (24) :3206-3208
[14]   MODES OF PROPAGATING LIGHT WAVES IN THIN DEPOSITED SEMICONDUCTOR FILMS [J].
TIEN, PK ;
ULRICH, R ;
MARTIN, RJ .
APPLIED PHYSICS LETTERS, 1969, 14 (09) :291-&