ITO spin-coated porous silicon structures

被引：20

作者：

Daoudi, K

Sandu, CS

Moadhen, A

Ghica, C

Canut, B

Teodorescu, VS

Blanchin, MG

Roger, JA

Oueslati, M

Bessaïs, B

机构：

[1] Univ Lyon 1, CNRS, UMR 5586, Dept Phys Mat, F-69622 Villeurbanne, France

[2] Fac Sci Tunis, Phys Mat Condensee Lab, Tunis 1060, Tunisia

[3] Natl Inst Phys Mat, R-76900 Bucharest, Romania

[4] Inst Natl Rech Sci & Tech, Lab Applicat Solaires, Hammam Lif 2050, Tunisia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 101卷 / 1-3期

关键词：

porous silicon; ITO; sol-gel; TEM; RBS;

D O I：

10.1016/S0921-5107(02)00693-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous silicon (PS)-based structures were formed by deposition of an indium tin oxide (ITO) onto PS surface using the sol-gel spin coating route. Two types of thermal annealing processes, classical and rapid thermal annealing, were used in order to crystallise the ITO films. The initial photoluminescence of the PS layers is partly preserved. The morphology of ITO/PS structure was investigated by cross-sectional transmission electron microscopy (XTEM) and by Rutherford backscattering spectrometry (RBS) measurements. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：262 / 265

页数：4

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